Staff Engineer - SiC Technologist

Navitas Semiconductor is seeking a Staff Engineer – SiC Technologist to serve as a senior technical leader within the India Center of Excellence. This role will drive advanced SiC technology development, device characterization strategy, reliability learning cycles, qualification readiness, and technical problem solving across GeneSiC™ MOSFETs, diodes, discretes, known-good-die, and SiCPAK™ module platforms. The Staff Engineer will be expected to connect device physics, process integration, package behavior, application stress conditions, and customer mission profiles to accelerate robust, high-efficiency SiC solutions for AI data centers, grid and energy infrastructure, industrial electrification, renewable energy, EV charging, and high-power conversion systems.

• Lead SiC technology development activities across device performance, process interaction, reliability robustness, package integration, and application-level stress behavior.
• Define characterization strategies for high-voltage SiC devices, including static, dynamic, switching, avalanche, short-circuit, thermal, body diode, gate oxide, and mission-profile-driven stress conditions.
• Architect test plans and data analysis methodologies to evaluate technology maturity, qualification readiness, design margins, and reliability risks across wafer, die, discrete, and module formats.
• Drive root-cause analysis for complex device, process, package, reliability, or customer-observed performance issues using electrical characterization, failure analysis, statistical modeling, and process history.
• Lead design-of-experiments planning, split-lot evaluation, process change assessment, technology transfer reviews, and engineering change impact analysis.
• Partner with global device engineering, product engineering, reliability, quality, applications, test, packaging, operations, and business teams to translate technology learning into product and platform improvements.
• Develop reusable characterization platforms, automated analysis flows, dashboards, and technical standards that increase engineering velocity and consistency across the India CoE and global teams.
• Provide technical guidance on SiC MOSFET and diode behavior across voltage classes, including 650 V, 1200 V, 1700 V, 2300 V, 3300 V, and higher-voltage platforms as applicable.
• Mentor Senior and junior engineers, review technical work products, and build deep SiC competency within the India Center of Excellence.
• Represent the SiC technology team in technical reviews, leadership updates, customer-facing discussions, supplier engagements, and external technical collaborations when required.